SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
卷宗概要
发明人
Po-Yu Yang
IPC 分类
CPC 分类
A semiconductor structure includes a substrate, a gate structure on the substrate, a source region, and a drain region. The gate structure includes a gate, a gate insulation layer between the gate and the substrate, a spacer on the substrate and adjacent to the gate, and an insulation feature disposed between a lower gate and the spacer and overlapping an upper gate in the normal direction of the substrate. The gate includes the upper and lower gates overlapping in a normal direction of the substrate, and in a first direction a length of the upper gate is greater than a length of the lower gate. The source region is disposed in the substrate and located on one side of the gate structure. The drain region is disposed in the substrate and located on the other side of the gate structure. A manufacturing method of a semiconductor structure is also provided.
原文（中文）
A semiconductor structure includes a substrate, a gate structure on the substrate, a source region, and a drain region. The gate structure includes a gate, a gate insulation layer between the gate and the substrate, a spacer on the substrate and adjacent to the gate, and an insulation feature disposed between a lower gate and the spacer and overlapping an upper gate in the normal direction of the substrate. The gate includes the upper and lower gates overlapping in a normal direction of the substrate, and in a first direction a length of the upper gate is greater than a length of the lower gate. The source region is disposed in the substrate and located on one side of the gate structure. The drain region is disposed in the substrate and located on the other side of the gate structure. A manufacturing method of a semiconductor structure is also provided.