FABRICATION OF TRENCH TRANSISTOR WITH ESD IN TRENCH
卷宗概要
申请人
Alpha and Omega Semiconductor International LP
发明人
Xueqing Liu; Qinhai Jin; Sik Lui; Xiaobin Wang; Wenwen Li; Lingpeng Guan; Madhur Bobde; Jian Wang; Sekar Ramamoorthy
IPC 分类
CPC 分类
A method of fabrication and composition of matter, comprising a semiconductor substrate including ions of a first conductivity type wherein the ions of the first conductivity are opposite ions of a second conductivity type, An Electrostatic Discharge Protection (ESD) trench formed in the semiconductor substrate with a lower insulation layer formed over a surface of the ESD trench in the semiconductor substrate. A nitride layer is formed over the lower insulation layer in the ESD trench, and an upper insulation is formed on the nitride layer in the ESD trench. An ESD semiconductor layer is formed on the upper insulation layer.
原文（中文）
A method of fabrication and composition of matter, comprising a semiconductor substrate including ions of a first conductivity type wherein the ions of the first conductivity are opposite ions of a second conductivity type, An Electrostatic Discharge Protection (ESD) trench formed in the semiconductor substrate with a lower insulation layer formed over a surface of the ESD trench in the semiconductor substrate. A nitride layer is formed over the lower insulation layer in the ESD trench, and an upper insulation is formed on the nitride layer in the ESD trench. An ESD semiconductor layer is formed on the upper insulation layer.