GATE-CONTROLLED SEMICONDUCTOR DEVICES HAVING TEMPERATURE COMPENSATED GATE RESISTANCES
卷宗概要
发明人
Thomas Harrington
IPC 分类
CPC 分类
Semiconductor devices comprise a semiconductor layer structure and a gate structure that comprises a high resistance portion and a low-resistance portion on the semiconductor layer structure. The high resistance portion of the gate structure comprises a first section that has a first resistance temperature coefficient and a second section that has a second resistance temperature coefficient that differs from the first resistance temperature coefficient.
原文（中文）
Semiconductor devices comprise a semiconductor layer structure and a gate structure that comprises a high resistance portion and a low-resistance portion on the semiconductor layer structure. The high resistance portion of the gate structure comprises a first section that has a first resistance temperature coefficient and a second section that has a second resistance temperature coefficient that differs from the first resistance temperature coefficient.