SHIFTED STACKED FETS WITH BACKSIDE S/D CONTACTS
卷宗概要
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
Sarah Nahar Chowdhury; Ruilong Xie; Chen Zhang; Shay Reboh
IPC 分类
CPC 分类
Semiconductor devices include a first bottom field effect transistor (FET) having a bottom source/drain (S/D) structure. A top FET is above the bottom FET and has a top S/D structure. A backside top contact is in electrical contact with a bottom surface and a side surface of the top S/D structure and extends below the bottom FET. A dielectric liner, disposed along sidewalls of the backside top contact, separates the backside top contact from the bottom S/D structure.
原文（中文）
Semiconductor devices include a first bottom field effect transistor (FET) having a bottom source/drain (S/D) structure. A top FET is above the bottom FET and has a top S/D structure. A backside top contact is in electrical contact with a bottom surface and a side surface of the top S/D structure and extends below the bottom FET. A dielectric liner, disposed along sidewalls of the backside top contact, separates the backside top contact from the bottom S/D structure.