SEMICONDUCTOR DEVICE
卷宗概要
发明人
Ju Youn KIM; Gi Gwan PARK
IPC 分类
CPC 分类
A semiconductor device includes a substrate with first through fourth regions and an interlayer insulating layer disposed thereon that has first through fourth trenches corresponding to the first through fourth regions. Each of the trenches has a corresponding gate insulating layer and gate electrode that includes a lower conductive layer and an upper gate electrode. The lower conductive layers in each trench may have different thicknesses from each other and may be formed of the same conductive material. The thickest of the four lower conductive layers may have the corresponding upper gate electrode cover its uppermost surface.
原文（中文）
A semiconductor device includes a substrate with first through fourth regions and an interlayer insulating layer disposed thereon that has first through fourth trenches corresponding to the first through fourth regions. Each of the trenches has a corresponding gate insulating layer and gate electrode that includes a lower conductive layer and an upper gate electrode. The lower conductive layers in each trench may have different thicknesses from each other and may be formed of the same conductive material. The thickest of the four lower conductive layers may have the corresponding upper gate electrode cover its uppermost surface.