SILICON SOURCE AND DRAIN TRENCH FILL FOR WIDER CONTACTS
卷宗概要
申请人
Intel Corporation
发明人
Tao Chu; Guowei Xu; Robin Chao; Feng Zhang; Ting-Hsiang Hung; Chia-Ching Lin; Yang Zhang; Kan Zhang; Chun Wing Yeung; Minwoo Jang; Yanbin Luo; Paul Packan; Chung-Hsun Lin; Anand Murthy
IPC 分类
CPC 分类
Integrated circuit (IC) devices having contacts to source and drain bodies in narrow trenches. An IC device includes first and second source or drain bodies in first and second transistors, first and second contact structures on the first and second source or drain bodies, and a dielectric between the first and second source or drain bodies and between the first and second metallization structures, and the dielectric may consist of substantially pure silicon, for example, amorphous silicon. The dielectric includes silicon and is devoid of oxygen and nitrogen. The contact structures may be formed using an etch of the silicon dielectric in the contact trenches that is selective to other dielectrics.
原文（中文）
Integrated circuit (IC) devices having contacts to source and drain bodies in narrow trenches. An IC device includes first and second source or drain bodies in first and second transistors, first and second contact structures on the first and second source or drain bodies, and a dielectric between the first and second source or drain bodies and between the first and second metallization structures, and the dielectric may consist of substantially pure silicon, for example, amorphous silicon. The dielectric includes silicon and is devoid of oxygen and nitrogen. The contact structures may be formed using an etch of the silicon dielectric in the contact trenches that is selective to other dielectrics.