SEMICONDUCTOR DEVICES AND METHODS OF FORMATION

原文（中文）

A control circuitry region of a pixel sensor of a semiconductor device includes a plurality of conversion gain circuits that may be selectively activated and/or deactivated in various combinations to enable a plurality of sequential conversion gain operations to be performed across an exposure operation of the semiconductor device. The control circuitry region may include a first conversion gain circuit and a second conversion gain circuit that are connected to a floating diffusion node of the pixel sensor in parallel. The selectable parallel conversion gain circuits enable sequential conversion gain operations to be performed for the pixel sensor such that the capacitance in the pixel sensor may be gradually increased through the conversion gain operations. Gradually increasing the capacitance in the pixel sensor across the sequential conversion gain operations provides for smaller signal-to-noise ratio (SNR) drops, which enables a low SNR drop to be achieved for the pixel sensor.