METAL OXIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICE
卷宗概要
发明人
Petar Atanackovic
IPC 分类
CPC 分类
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or GaO. Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from NiGaOor NiAlO, where 0<z<1. In some cases, the second epitaxial oxide material can include Ni(Al,Ga)O.
原文（中文）
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or GaO. Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from NiGaOor NiAlO, where 0<z<1. In some cases, the second epitaxial oxide material can include Ni(Al,Ga)O.