Power module and manufacturing method thereof
数据来源:EPO OPS
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卷宗概要
申请号
CN20171063230
发明人
LI HUI; YANG SHENGSONG; LIAO WENQI; YANG QINYAO; LI YAN; ZHANG JIANLI; ZENG QIULIAN
申请日
Jan 24, 2017
公开日
Oct 8, 2019
专利族 ID
62963201
IPC 分类
CPC 分类
[0001] This invention provides a power module and its manufacturing method. The power module includes: an insulating dielectric substrate, comprising a first conductive layer and a first insulating layer disposed on the first conductive layer, wherein the first insulating layer has a first conductive path; a second insulating layer, wherein the second insulating layer has a second conductive path; a patterned second conductive layer; and at least one power semiconductor chip embedded between the first and second insulating layers. The power semiconductor chip is electrically connected to the first conductive layer through the first conductive path and electrically connected to the second conductive layer through the second conductive path. Packaging eliminates the need for molding, saving production costs. Furthermore, the power semiconductor chip achieves electrical connection to the upper conductive layer by creating through-holes in the insulating layer and filling them with conductive material, reducing the module's size and facilitating miniaturization.
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