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Pressure sensor and preparation method thereof

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数据来源:EPO OPS

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92161468专利族
§ Ⅰ

卷宗概要

申请人

BEIJING BOE SENSING TECH CO LTD; BOE TECHNOLOGY GROUP CO LTD; BEIJING BOE TECHNOLOGY DEV CO LTD

申请号

CN202410543984

发明人

FU BO

申请日

Apr 30, 2024

公开日

Aug 9, 2024

专利族 ID

92161468

IPC 分类

B81B7/00B81B7/02B81C1/00G01L1/00G01L19/00G01L9/00

CPC 分类

B81B7/0006B81B7/0048B81B7/02B81C1/00015B81C1/00325G01L1/005G01L19/0038G01L9/00B81B2201/0264

According to the pressure sensor and the preparation method thereof disclosed by the embodiment of the invention, the assembly of the MEMS chip and the ASIC chip is realized by using the integrated glass substrate, the packaging process is simplified, and the production efficiency is improved. The MEMS chip is connected with the glass substrate in an anodic bonding manner, and the thermal expansion coefficients of the glass substrate and the MEMS chip are close to each other, so that the stress caused by different thermal deformation is reduced, and the product performance is improved. In addition, the anodic bonding mode replaces the original mode of bonding and fixing the MEMS chip, thermal stress can be prevented from being generated in the subsequent packaging process, and the product performance is further improved. The MEMS chip is fixed on the glass substrate in an anodic bonding mode, and a firm Si-O-Si chemical bond can be formed, so that the connection strength of the MEMS chip and the glass substrate is high, the sealing performance is good, and the reliability is high.

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