Power semiconductor device, power device module, bridge arm circuit and electronic equipment
数据来源:EPO OPS
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卷宗概要
申请号
CN202310261822
发明人
CHEN LINGLIN; TANG LONGGU; GAO BO; ZHENG SHENG; XU SHANFENG
申请日
Mar 10, 2023
公开日
Sep 10, 2024
专利族 ID
92607159
IPC 分类
CPC 分类
The embodiment of the invention provides a power semiconductor device, a power device module, a bridge arm circuit and electronic equipment, relates to the field of semiconductor devices, and aims to solve the problem that bridge arm crosstalk may be generated when the power semiconductor device is applied to the bridge arm circuit as a switching device. The power semiconductor device comprises a power transistor and a discharge transistor which are integrated in a chip; the power transistor comprises a first grid electrode, a first source electrode and a first drain electrode, and the discharge transistor comprises a second grid electrode, a second source electrode and a second drain electrode; one of the second source electrode and the second drain electrode is connected with the first grid electrode, and the other of the second source electrode and the second drain electrode is connected with the first source electrode. The power semiconductor device can be applied to a power device module, a bridge arm circuit and electronic equipment.
EPO 研究资料
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