Chip, chip stacking structure, chip packaging structure and electronic equipment

[0001] This application provides a chip, a chip stack structure, a chip packaging structure, and an electronic device, relating to the field of semiconductor technology. The chip is bonded to other chips and achieves signal communication through a dielectric layer and multiple bonding devices penetrating the dielectric layer. The parasitic capacitance between adjacent bonding devices in the chip is relatively small, thereby improving the signal transmission performance of the chip. The chip includes: a wafer; a first dielectric layer disposed on one side of the wafer; and multiple bonding devices penetrating the first dielectric layer, including adjacent first and second bonding devices; a channel is formed between the first and second bonding devices in the first dielectric layer, and the dielectric constant within the channel is lower than the dielectric constant of the material of the first dielectric layer.