SPIN ON CARBON HARDMASK COMPOSITIONS WITH LOW EVAPORATION LOSS AND PATTERNING METHOD BY USING THE SAME
SPIN ON CARBON HARDMASK COMPOSITIONS WITH LOW EVAPORATION LOSS AND PATTERNING METHOD BY USING THE SAME
The objective is to provide a spin-on hardmask composition exhibiting a small evaporation loss and being suitable for use in a semiconductor photolithography process which means to provide a composition containing a polymer represented by Formula 1, a surfactant, and an organic solvent and a patterning method using the same composition. The hardmask produced by the method has the effect of a yield improvement with excellent heat resistance by minimizing evaporation loss which is a cause of defects in a process.