원래 이름 기록: Tokyo Electron Limited

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

To ensure consistency in quality of maintenance work, a maintenance work support system including a work robot for performing maintenance work for each work item includes: a sensor configured to measure a measurement-target part specified for a target work item every time maintenance work for the work item is performed; a processor; and a memory. The processor functions as: a determination unit configured to determine whether or not a measurement result measured by the sensor satisfies a work quality set for the work item; and a control unit configured to, when it is determined that the work quality is not satisfied, control an additional operation for the maintenance work for the work item to be performed until the determination unit determines that the work quality is satisfied.

The present disclosure provides a computer program, an information processing method, and an information processing device that visualize a relationship among a plurality of processing steps. The computer program causes a computer to acquire processing step groups obtained by classifying processing steps executed for processing a substrate based on a range of values of parameters for defining contents of the processing steps, and display a graphic image representing each processing step group at positions corresponding to the values of the parameters related to each processing step group in a two-dimensional or three-dimensional coordinate space obtained by dimensionally compressing a multi-dimensional space represented using the parameters.

A plasma processing apparatus includes a processing container, a substrate holder that holds a substrate and accommodated inside the processing container, and a plasma generation mechanism that generates an inductively-coupled plasma. The plasma generation mechanism includes a discharge chamber having a loop shape, an antenna including a magnetic core and a coil wound around the magnetic core, the antenna generating an induced current in the discharge chamber, and a radio-frequency power supply that supplies radio-frequency power to the coil.

A plasma processing apparatus includes: a tubular reaction tube; a substrate holder that holds a plurality of substrates stacked in multiple stages and to be inserted into and removed from the reaction tube; a pair of electrodes disposed outside the reaction tube and arranged to face each other across a center of the reaction tube; a radio-frequency power supply that generates plasma in the reaction tube by applying radio-frequency power to both or one of the pair of electrodes; and a pair of reaction tube wall protection members including first and second reaction tube wall protection members. The pair of reaction tube wall protection members cover respective inner wall surfaces of the reaction tube that are opposite to outer wall surfaces of the reaction tube on which the pair of electrodes are installed.

The plasma processing method includes: (a) using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first layer on an inner wall of the chamber and a substrate support surface for supporting a first substrate in the chamber, (b) placing the first substrate above the substrate support surface on which the first layer is formed, and (c) using a second plasma generated from a second processing gas different from the first processing gas when the first substrate is placed above the substrate support surface to remove the first layer formed on the inner wall of the chamber.

A substrate processing method includes: performing a backside film forming operation that forms a backside film on a back surface of a substrate, wherein the substrate includes a front surface on which a pattern or device structure is formed and the back surface opposite to the front surface, and wherein the backside film is configured to generate stress on the back surface of the substrate upon exposure; and performing an exposing operation that exposes at least a part of the backside film to reduce warpage of the substrate after the backside film forming operation.

A substrate support assembly includes a base, a substrate support on the base, and a supply unit. The base includes a first channel and a second channel. The first channel is a channel for a first heat transfer medium. The second channel is a channel for a second heat transfer medium. The supply unit is connected to the second channel. The second channel extends between the first channel and the substrate support. The supply unit is connected to the second channel to supply the second heat transfer medium to the second channel. The second heat transfer medium is a liquid metal.

A method of forming a bonded wafer, where the method includes receiving a first wafer including a first surface characteristic and a second wafer including a second surface characteristic; based on the first surface characteristic, performing a first location specific processing on the first wafer to obtain a first surface-to-be-bonded including a third surface characteristic; and bonding the first surface-to-be-bonded of the first wafer with the second wafer.