元の名称記録: Avago Technologies International Sales Pte. Limited

The subject technology is directed to semiconductors and fabrication methods thereof. The subject technology provides a first circuit, a die attach film coupled to a bottom side of the first circuit, and a heat spreader layer coupled between the first circuit and the die attach film. In some cases, the heat spreader layer is directly coupled to at least one of the first circuit or the die attach film. In some cases, the first layer or the die attach film is non-conductive. The heat spreader layer can be configured to dissipate heat laterally along a side of the first circuit. There are other embodiments as well.

An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, and a second gate disposed on the channel between the first gate and the drain. The first gate includes a first metal and the second gate includes a second metal, the second metal being different from the first metal.

An example multigate semiconductor device with varied threshold voltages includes a channel, a source disposed on the channel, a drain disposed on the channel, a first gate disposed on the channel between the source and the drain, a second gate disposed on the channel between the first gate and the drain, and/or a native region disposed below at least a portion of the channel. In some examples, the first gate comprises a first metal and the second gate comprises a second metal that is different from the first metal.