TESTING STRUCTURE AND TESTING METHOD FOR LOCATING SOURCE OF PLASMA DAMAGE

原文（中国語）

This application discloses a testing structure for locating a source of a plasma damage. A testing substructure corresponding to a selected metal layer includes a first MOS transistor, a first gate lead, a first antenna and a monitoring gate pad. The first gate lead is composed of a metal wire of the selected metal layer. The first antenna is connected with the first gate lead. The first gate lead is connected with a first gate conductive material layer of the first MOS transistor. The first antenna, the first gate lead and the first gate conductive material layer form a first pathway for accumulating plasma charges towards a surface of a first gate dielectric layer. The monitoring gate pad is connected with the first gate lead. This application further discloses a testing method for locating a source of a plasma damage. This application can locate the source of the plasma damage.