METHOD FOR DETECTING DEFECTS IN A PHOTOLITHOGRAPHY MASK FROM AN AERIAL IMAGE
案件概要
発明者
Martin van Driel; Bjoern Barz; Bjoern Brauer; Alexander Freytag; Bjoern Froehlich; Dirk Seidel
IPC分類
CPC分類
The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.
原文（中国語）
The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.
外部リソース