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案件記録

Low Voltage Reference Generator Using MOS devices

発明審査中
8閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Weibiao Zhang; Ke Yun; Bruno W. Garlepp

IPC分類

G5F 1/46G5F 1/567G5F 1/575

CPC分類

G5F1/468G5F1/567G5F1/575

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.

原文(中国語)

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.

外部リソース