APPARATUS AND METHODS FOR AMPLIFIER CIRCUITS FOR READING MRAM MEMORY CELLS

原文（中国語）

An apparatus includes a memory cell including a magnetic memory element coupled in series with a selector element, the memory cell including a first terminal coupled to a word line driver circuit and a second terminal coupled to a bit line driver circuit, and an amplifier circuit comprising an input terminal coupled to the bit line driver circuit, and an output terminal coupled to a current source configured to conduct a read current. The amplifier circuit is configured to amplify a voltage that is based on a difference between a first voltage across the memory cell and a second voltage across the memory cell.