STORAGE DEVICE, ELECTRONIC APPARATUS, AND STORAGE DEVICE CONTROL METHOD
案件概要
出願人
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
発明者
TARO TATSUNO
IPC分類
CPC分類
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.
原文(中国語)
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.
外部リソース