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案件記録

CONFIGURABLE LOW VOLTAGE DETECTION THRESHOLD AT A MEMORY SYSTEM

発明審査中
1閲覧数
25請求項 · 3 独立
§ Ⅰ

案件概要

IPC分類

G11C 16/22G6F 3/6

CPC分類

G11C16/225G6F3/611G6F3/673G6F3/679

Methods, systems, and devices for configurable low voltage detection threshold at a memory system are described. The described techniques provide for a memory system to adjust a low voltage detection (LVD) threshold according to an interface speed of the memory system. The LVD threshold may be correlated with the interface speed, such that when operating at a relatively high interface speed, the memory system may set the LVD threshold to a relatively high value and when operating at a relatively low interface speed, the memory system may set the LVD threshold to a relatively low value. Additionally, or alternatively, the memory system may be configured to adjust the LVD threshold when changing an interface speed for subsequent operations. For example, the memory system may receive a command indicating a second interface speed and may set the LVD threshold to a second value that is associated with the second speed.

原文(中国語)

Methods, systems, and devices for configurable low voltage detection threshold at a memory system are described. The described techniques provide for a memory system to adjust a low voltage detection (LVD) threshold according to an interface speed of the memory system. The LVD threshold may be correlated with the interface speed, such that when operating at a relatively high interface speed, the memory system may set the LVD threshold to a relatively high value and when operating at a relatively low interface speed, the memory system may set the LVD threshold to a relatively low value. Additionally, or alternatively, the memory system may be configured to adjust the LVD threshold when changing an interface speed for subsequent operations. For example, the memory system may receive a command indicating a second interface speed and may set the LVD threshold to a second value that is associated with the second speed.

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