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案件記録

UNIFORM IN SITU CLEANING AND DEPOSITION

発明審査中
21請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Saket Rathi; Tuan A. Nguyen; Amit Bansal; Yuxing Zhang; Badri N. Ramamurthi; Nitin Pathak; Abdul Aziz Khaja; Sarah Michelle Bobek

IPC分類

H1J 37/32C23C 16/44C23C 16/455C23C 16/50

CPC分類

H1J37/32449C23C16/4405C23C16/45502C23C16/45591C23C16/50H1J37/32357H1J37/32862H1J2237/332

Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

原文(中国語)

Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

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