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案件記録

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

発明審査中
4閲覧数
20請求項 · 4 独立
§ Ⅰ

案件概要

発明者

Tetsuaki INADA; Takayuki SATO

IPC分類

H1J 37/32

CPC分類

H1J37/32449H1J37/3211

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting a process chamber; a first gas supplier provided with a first supply port through which a first process gas is supplied; a second gas supplier provided with a second supply port through which a second process gas is supplied; a plasma generator provided along an outer circumference of the process vessel and configured to be capable of plasma-exciting the first process gas supplied into the process chamber; and a substrate mounting table on which a substrate is placed. The second supply port is provided at a supply pipe extending downward from a position in a ceiling surface of the process chamber located closer to a radial center of the process vessel than the first supply port, and is provided below the first supply port.

原文(中国語)

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting a process chamber; a first gas supplier provided with a first supply port through which a first process gas is supplied; a second gas supplier provided with a second supply port through which a second process gas is supplied; a plasma generator provided along an outer circumference of the process vessel and configured to be capable of plasma-exciting the first process gas supplied into the process chamber; and a substrate mounting table on which a substrate is placed. The second supply port is provided at a supply pipe extending downward from a position in a ceiling surface of the process chamber located closer to a radial center of the process vessel than the first supply port, and is provided below the first supply port.

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