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案件記録

WAFER PRODUCING METHOD

発明審査中
10閲覧数
13請求項 · 1 独立
§ Ⅰ

案件概要

発明者

Karl Heinz PRIEWASSER; Christoph EPPLE

IPC分類

H1L 21/2

CPC分類

H1L21/2021H1L21/2013H1L21/2016

The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.

原文(中国語)

The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.

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