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案件記録
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS
発明審査中
1閲覧数
20請求項 · 2 独立
§ Ⅰ
案件概要
発明者
Chihiro UMEDA; Yuta SAITO; Hiroyuki YAMASHITA
IPC分類
H1L 21/2H1J 37/32
CPC分類
H1L21/234H1J37/3244H1L21/217H1J2237/338
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.
原文（中国語）
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method comprises radically oxidizing a first film by using a plasma generated by a treatment gas including a hydrogen isotope gas.
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