METHODS FOR FABRICATING SEMICONDUCTOR DEVICES AND RESIST COMPOSITIONS FOR UNDERLAYERS USED THEREFOR

原文（中国語）

A method for fabricating a semiconductor device, includes forming an underlayer on a feature layer, forming a photoresist layer on the underlayer, exposing a first region of the photoresist layer, forming a photoresist pattern by removing a second region of the photoresist layer using a developer while retaining the first region of the photoresist layer, and processing the underlayer and the feature layer using the photoresist pattern, where each of the underlayer and the photoresist layer includes at least one of a benzooxazine monomer or a polymer produced by polymerizing the benzooxazine monomer.