COMPOSITION, METHOD OF TREATING METAL-CONTAINING LAYER BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME
案件概要
発明者
Cheol HAM; Giho KO; Sungmin KIM; Youngchan KIM; Jina KIM; Wonsik YOON; Minhyung CHO; Donghoon HA; Kyuyoung HWANG
IPC分類
CPC分類
Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizer, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1.
原文（中国語）
Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizer, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1.
外部リソース