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案件記録

AUTOMATED MINIMIZATION OF ETCH VARIATIONS BY ADJUSTING ETCH PROCESS BASED ON PATTERN DENSITY

発明審査中
20請求項 · 3 独立
§ Ⅰ

案件概要

出願人

Intel Corporation

発明者

Divya Suresh; Egon Sohn; Ajay Sathe; Adane Geremew; Yixiong Zheng; Manan Shah; Xian Yao Luo; Hale Erten; Bikram Baidya; Vishal Javvaji; Cemil M. Atay

IPC分類

H1L 21/311H1L 21/2H1L 21/27H1L 21/3065

CPC分類

H1L21/31116H1L21/2164H1L21/274H1L21/3065

Techniques, structures, and systems related to etch processing using automated selection of etch parameters are discussed. Patterns of features having differing pattern densities are etched into underlying material layers having the same or similar characteristics such as material composition, thickness, etc. While other process parameters remain substantially constant, gas flows, as defined by a gas flow ratio, of etchant gases are automatically selected from available or selectable gas flow ratios using the pattern densities. The ratio of gas flows increases monotonically with increasing pattern density.

原文(中国語)

Techniques, structures, and systems related to etch processing using automated selection of etch parameters are discussed. Patterns of features having differing pattern densities are etched into underlying material layers having the same or similar characteristics such as material composition, thickness, etc. While other process parameters remain substantially constant, gas flows, as defined by a gas flow ratio, of etchant gases are automatically selected from available or selectable gas flow ratios using the pattern densities. The ratio of gas flows increases monotonically with increasing pattern density.

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