AUTOMATED MINIMIZATION OF ETCH VARIATIONS BY ADJUSTING ETCH PROCESS BASED ON PATTERN DENSITY
案件概要
出願人
Intel Corporation
発明者
Divya Suresh; Egon Sohn; Ajay Sathe; Adane Geremew; Yixiong Zheng; Manan Shah; Xian Yao Luo; Hale Erten; Bikram Baidya; Vishal Javvaji; Cemil M. Atay
IPC分類
CPC分類
Techniques, structures, and systems related to etch processing using automated selection of etch parameters are discussed. Patterns of features having differing pattern densities are etched into underlying material layers having the same or similar characteristics such as material composition, thickness, etc. While other process parameters remain substantially constant, gas flows, as defined by a gas flow ratio, of etchant gases are automatically selected from available or selectable gas flow ratios using the pattern densities. The ratio of gas flows increases monotonically with increasing pattern density.
原文(中国語)
Techniques, structures, and systems related to etch processing using automated selection of etch parameters are discussed. Patterns of features having differing pattern densities are etched into underlying material layers having the same or similar characteristics such as material composition, thickness, etc. While other process parameters remain substantially constant, gas flows, as defined by a gas flow ratio, of etchant gases are automatically selected from available or selectable gas flow ratios using the pattern densities. The ratio of gas flows increases monotonically with increasing pattern density.
外部リソース