BACKSIDE ETCH PROCESSES FOR ULTRA UNIFORMITY OF FRONT-END STRUCTURES

原文（中国語）

Isolation structures between transistors in integrated circuit (IC) devices. An IC device includes transistors coupled to an interconnect network, and between the transistors a dielectric structure with a wider width away from the interconnect network and a narrower width nearer the interconnect network. Dielectric structures with wider back-side widths may separate gate electrodes and/or source and drain contacts of the transistors. The dielectric structures may be formed by etching an opening between metallization structures of the transistors from a back side of the device substrate and by depositing liner and fill dielectrics over the back-side opening.