MODIFIED ETCH STOP LAYERS FOR FORMING GATE VIAS

原文（中国語）

One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a source/drain (S/D) contact over an S/D feature; a gate structure over a channel region, where the channel region is adjacent the S/D feature; a first interlayer dielectric (ILD) layer over the gate structure and surrounding the S/D contact; an etch stop layer over the first ILD layer and the S/D contact, where the etch stop layer includes a first portion and a second portion, and the second portion is different from the first portion in chemical composition; a second ILD layer over the etch stop layer; and a gate via over the gate structure, where the gate via is surrounded by the second portion of the etch stop layer.