INNER SPACER AS ETCH STOP LAYER FOR BACKSIDE POWER RAIL
案件概要
出願人
INTERNATIONAL BUSINESS MACHINES CORPORATION
発明者
Ruilong Xie; Tao Li; HUIMEI ZHOU; Reinaldo Vega; Xiaoming Yang
IPC分類
CPC分類
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.
原文（中国語）
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a deep via connecting a first source/drain (S/D) to a backside power rail (RB) below the first S/D, a dielectric etch stop inner spacer below the first S/D, and an RB sidewall surrounding the RB comprising an edge laterally overlapping the dielectric etch stop inner spacer.
外部リソース