SEMICONDUCTOR DEVICES HAVING INTERCONNECTION STRUCTURES THEREIN WITH ENHANCED METAL ALLOYS
案件概要
発明者
Hase Naoki; Inji Lee; Keiichiro Jinushi; Takanobu Matsumura; Gyu-Hee Park; Sanghyun Park; Eunyoung Lee
IPC分類
CPC分類
A semiconductor device includes a substrate, and an interconnection layer on the substrate. The interconnection layer includes an interconnection structure having a first interconnection line therein that includes a metal alloy containing a single phase of ruthenium and a non-ruthenium first element having a concentration in a range from greater than 0 at % to 40 at % in the metal alloy. In the event the first element is molybdenum, the concentration of the first element in the metal alloy may range from 0.1 at % to 30 at %; but, in the event the first element is tungsten, the concentration of the first element in the metal alloy may range from 0.1 at % to 40 at %.
原文（中国語）
A semiconductor device includes a substrate, and an interconnection layer on the substrate. The interconnection layer includes an interconnection structure having a first interconnection line therein that includes a metal alloy containing a single phase of ruthenium and a non-ruthenium first element having a concentration in a range from greater than 0 at % to 40 at % in the metal alloy. In the event the first element is molybdenum, the concentration of the first element in the metal alloy may range from 0.1 at % to 30 at %; but, in the event the first element is tungsten, the concentration of the first element in the metal alloy may range from 0.1 at % to 40 at %.
外部リソース