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案件記録

Semiconductor Device and Method for Partial EMI Shielding

発明審査中
1閲覧数
25請求項 · 4 独立
§ Ⅰ

案件概要

IPC分類

H1L 23/552H1L 21/48H1L 23/H1L 23/498H1L 25/16

CPC分類

H1L23/552H1L21/4817H1L21/4853H1L23/49816H1L23/49838H1L24/16H1L25/162H1L25/165H1L2224/16225H1L2924/16151H1L2924/1616H1L2924/3025

A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.

原文(中国語)

A semiconductor device includes a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A vertical interconnect structure is disposed in the encapsulant. A shielding layer is formed over the encapsulant and vertical interconnect structure. A groove is formed in the shielding layer around the vertical interconnect structure. A portion of the shielding layer remains over the vertical interconnect structure as a contact pad.

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