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案件記録

LITHOGRAPHIC SEAM IMPLEMENTATION FOR ACTIVE INTERCONNECT ROUTING ACROSS MULTIPLE RETICLE FIELDS

発明審査中
6閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Keith Zawadzki; Nathan McCorkle; Somnath Chakraborty; Aalay Kapadia; Kim-Anh Sherman; Kirsten Thompson; Apoorva Jain; Shakul Tandon

IPC分類

H1L 23/58G3F 7/G3F 9/H1L 21/48H1L 21/66H1L 23/498H1L 23/544

CPC分類

H1L23/585G3F7/70466G3F9/70H1L21/4857H1L22/12H1L22/32H1L23/49822H1L23/544

Integrated circuit dies, interposers, systems, and methods are described related to implementing seams between fields exposed using different lithographic exposures. First and second metallization stack regions or fields each implement signal and/or power routing and are separated by a seam therebetween. The seam includes conductive features that span the seam and interconnect the metallization stack regions. A test feature surrounds the metallization stack regions and includes metallization portions that also span the seams. The test feature is within a seal ring and, through electrical testing, validates the conductive features that span the seam.

原文(中国語)

Integrated circuit dies, interposers, systems, and methods are described related to implementing seams between fields exposed using different lithographic exposures. First and second metallization stack regions or fields each implement signal and/or power routing and are separated by a seam therebetween. The seam includes conductive features that span the seam and interconnect the metallization stack regions. A test feature surrounds the metallization stack regions and includes metallization portions that also span the seams. The test feature is within a seal ring and, through electrical testing, validates the conductive features that span the seam.

外部リソース