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案件記録

SEMICONDUCTOR DIE PACKAGES AND METHODS OF FORMATION

発明審査中
3閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Tzu Jung TIEN; Jen-Yuan CHANG

IPC分類

H1L 23/H1L 23/31H1L 23/48H1L 23/58H1L 25/H1L 25/65

CPC分類

H1L24/3H1L23/3171H1L23/585H1L24/5H1L24/8H1L25/657H1L25/50H1L23/481H1L23/562H1L23/564H1L2224/35H1L2224/5547H1L2224/8146H1L2224/8225

A recess is formed through a passivation layer of an integrated circuit (IC) die and into an opening in a metal pad structure at the top of a seal ring structure of the IC die. The recess is formed to open up any voids that may have occurred in the passivation layer within the opening in the metal pad structure. This enables the recess (and thus, the void) to be filled in, which reduces the likelihood that the void might otherwise cause delamination and film peeling in the passivation layer. The recess (and thus, the void) may be filled in to form a bonding via and a bonding pad, which may be dummy structures or may be used to bond the IC die with another IC in the semiconductor die package.

原文(中国語)

A recess is formed through a passivation layer of an integrated circuit (IC) die and into an opening in a metal pad structure at the top of a seal ring structure of the IC die. The recess is formed to open up any voids that may have occurred in the passivation layer within the opening in the metal pad structure. This enables the recess (and thus, the void) to be filled in, which reduces the likelihood that the void might otherwise cause delamination and film peeling in the passivation layer. The recess (and thus, the void) may be filled in to form a bonding via and a bonding pad, which may be dummy structures or may be used to bond the IC die with another IC in the semiconductor die package.

外部リソース