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案件記録

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

発明審査中
4閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Shunya MIKAMI; Katsutoki SHIRAI; Yuji OSUMI

IPC分類

H1L 23/

CPC分類

H1L24/13H1L24/11H1L24/14H1L24/73H1L2224/1134H1L2224/13007H1L2224/13019H1L2224/14133H1L2224/73207

A semiconductor device includes a semiconductor element and at least one metal bump. The semiconductor element includes a first electrode. The metal bump is bonded to the first electrode. The metal bump includes a fractured portion spaced apart from the first electrode in a thickness direction of the semiconductor element. As viewed in the thickness direction, a center of the fractured portion is offset from a center of the metal bump. The metal bump includes a large-diameter portion in contact with the first electrode, and a small-diameter portion having a diameter smaller than that of the large-diameter portion. The small-diameter portion is located on a side of the large-diameter portion opposite the first electrode.

原文(中国語)

A semiconductor device includes a semiconductor element and at least one metal bump. The semiconductor element includes a first electrode. The metal bump is bonded to the first electrode. The metal bump includes a fractured portion spaced apart from the first electrode in a thickness direction of the semiconductor element. As viewed in the thickness direction, a center of the fractured portion is offset from a center of the metal bump. The metal bump includes a large-diameter portion in contact with the first electrode, and a small-diameter portion having a diameter smaller than that of the large-diameter portion. The small-diameter portion is located on a side of the large-diameter portion opposite the first electrode.

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