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案件記録

SEMICONDUCTOR DEVICE

発明審査中
18請求項 · 1 独立
§ Ⅰ

案件概要

IPC分類

H1L 23/H1L 23/31

CPC分類

H1L24/29H1L23/3142H1L24/42H1L2224/29111H1L2224/29139H1L2924/1047H1L2924/105

A semiconductor device includes: a semiconductor element; a support member; a bonding layer interposed between the semiconductor element and the support member; and a sealing resin that covers the semiconductor element and at least a portion of the support member, wherein the bonding layer is a layer in which a layer containing first metal and a layer containing second metal are integrated without going through a molten state, and wherein the support member includes a first surface facing in a thickness direction and facing a side on which the semiconductor element is located, and a plurality of first recesses located outside the bonding layer and recessed from the first surface when viewed along the thickness direction.

原文(中国語)

A semiconductor device includes: a semiconductor element; a support member; a bonding layer interposed between the semiconductor element and the support member; and a sealing resin that covers the semiconductor element and at least a portion of the support member, wherein the bonding layer is a layer in which a layer containing first metal and a layer containing second metal are integrated without going through a molten state, and wherein the support member includes a first surface facing in a thickness direction and facing a side on which the semiconductor element is located, and a plurality of first recesses located outside the bonding layer and recessed from the first surface when viewed along the thickness direction.

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