OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE
案件概要
発明者
Kazuyuki ONOE
IPC分類
CPC分類
A semiconductor device includes a semiconductor substrate; an active layer provided on the semiconductor substrate, and configured to generate a laser beam; an optical modulation layer provided on the semiconductor substrate, the optical modulation layer being adjacent to the active layer, and configured to modulate the laser beam; a clad layer provided on the active layer and the optical modulation layer; and a contact layer provided on the clad layer, wherein the optical modulation layer has a first protrusion provided at an end part closer to the active layer, on an upper surface of the optical modulation layer, the clad layer has a second protrusion provided on an upper surface of the clad layer vertically above the first protrusion, and the contact layer is divided by the second protrusion in an optical axis direction of the laser beam.
原文(中国語)
A semiconductor device includes a semiconductor substrate; an active layer provided on the semiconductor substrate, and configured to generate a laser beam; an optical modulation layer provided on the semiconductor substrate, the optical modulation layer being adjacent to the active layer, and configured to modulate the laser beam; a clad layer provided on the active layer and the optical modulation layer; and a contact layer provided on the clad layer, wherein the optical modulation layer has a first protrusion provided at an end part closer to the active layer, on an upper surface of the optical modulation layer, the clad layer has a second protrusion provided on an upper surface of the clad layer vertically above the first protrusion, and the contact layer is divided by the second protrusion in an optical axis direction of the laser beam.
外部リソース