OPTICAL SEMICONDUCTOR DEVICE

原文（中国語）

An optical semiconductor device according to the present disclosure having a semiconductor laser section and an optical modulator section formed above a common semiconductor substrate, comprising: the semiconductor laser section including: a first-conductivity-type lower cladding layer; an active layer configured to emit laser light; and a second-conductivity-type upper cladding layer provided with a first-order diffraction grating, which are each made of a group III-V semiconductor compound crystal; and the optical modulator section including: a light absorption layer configured to absorb the laser light incident from the active layer, at least a part of the light absorption layer made of a group III-V semiconductor compound crystal containing Bi; and a scattered-light absorption layer that faces either a lower surface or an upper surface of the light absorption layer, or a pair of scattered-light absorption layers that face the lower surface and the upper surface of the light absorption layer, respectively.