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案件記録

SEMICONDUCTOR DRIVING DEVICE AND POWER CONVERSION DEVICE

発明審査中
18請求項 · 6 独立
§ Ⅰ

案件概要

IPC分類

H2M 1/88H2M 3/335

CPC分類

H2M1/88H2M3/33576

A semiconductor driving device according to the present disclosure includes: a timing generation unit which generates gate ON reference signals respectively for a plurality of gate terminals; a gate reference waveform generation unit which generates a first gate reference waveform and a second gate reference waveform on the basis of the gate ON reference signals, and controls the first gate reference waveform and the second gate reference waveform in shifting from a non-conductive state to a conductive state of a multi-gate semiconductor switching element and shifting from a conductive state to a non-conductive state of the multi-gate semiconductor switching element; and a signal amplification unit which receives, as an input waveform, the first gate reference waveform and the second gate reference waveform, and amplifies the input waveform so that an output waveform follows the input waveform.

原文(中国語)

A semiconductor driving device according to the present disclosure includes: a timing generation unit which generates gate ON reference signals respectively for a plurality of gate terminals; a gate reference waveform generation unit which generates a first gate reference waveform and a second gate reference waveform on the basis of the gate ON reference signals, and controls the first gate reference waveform and the second gate reference waveform in shifting from a non-conductive state to a conductive state of a multi-gate semiconductor switching element and shifting from a conductive state to a non-conductive state of the multi-gate semiconductor switching element; and a signal amplification unit which receives, as an input waveform, the first gate reference waveform and the second gate reference waveform, and amplifies the input waveform so that an output waveform follows the input waveform.

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