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案件記録

STATIC RANDOM-ACCESS MEMORY DEVICE

発明審査中
3閲覧数
14請求項 · 2 独立
§ Ⅰ

案件概要

発明者

Chun-Hsien HUANG; Yu-Tse KUO; Shu-Ru WANG; Chien-Hung CHEN; Tzu-Feng CHANG; Chun-Yen TSENG

IPC分類

H10B 10/

CPC分類

H10B10/12

Static random-access memory devices are provided. The static random-access memory device includes a first static random-access memory cell, a second static random-access memory cell adjacent to the first static random-access memory cell, an isolation structure between the first and second static random-access memory cells, a first dummy gate structure and a second dummy gate structure. The first dummy gate structure and the second dummy gate structure are on the isolation structure, between the first and second static random-access memory cells, and disposed along a first direction. A width of the isolation structure along the first direction is greater than or equal to a distance between a first sidewall of the first dummy gate structure facing away from the second dummy gate structure and a second sidewall of the second dummy gate structure facing away from the first dummy gate structure along the first direction.

原文(中国語)

Static random-access memory devices are provided. The static random-access memory device includes a first static random-access memory cell, a second static random-access memory cell adjacent to the first static random-access memory cell, an isolation structure between the first and second static random-access memory cells, a first dummy gate structure and a second dummy gate structure. The first dummy gate structure and the second dummy gate structure are on the isolation structure, between the first and second static random-access memory cells, and disposed along a first direction. A width of the isolation structure along the first direction is greater than or equal to a distance between a first sidewall of the first dummy gate structure facing away from the second dummy gate structure and a second sidewall of the second dummy gate structure facing away from the first dummy gate structure along the first direction.

外部リソース