SEMICONDUCTOR MEMORY DEVICES

原文（中国語）

A semiconductor memory device may include a substrate including a stack region and a pad region in a first horizontal direction, word lines extending in the first horizontal direction in the stack region, bit lines extending in a vertical direction in the stack region and spaced apart from one another in the first horizontal direction and a second horizontal direction, memory cells in the stack region and between the word lines and the bit lines, and a pad structure including word line pads spaced apart from each other in the vertical direction in the pad region. The word lines may include first and second word lines, which may be separated from each other in the second horizontal direction. The first and second horizontal directions may different. Each of the word line pads may be connected to the first and second words lines at a same vertical level.