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案件記録

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

発明審査中
4閲覧数
10請求項 · 1 独立
§ Ⅰ

案件概要

発明者

YAO-HSIUNG KUNG; YU-LI WU; SHAO-EN YEH

IPC分類

H10B 12/

CPC分類

H10B12/33H10B12/5H10B12/488

The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a data storage unit in a first dielectric layer; a word line disposed over the data storage unit; an array of conductive pads disposed over the word line; a hard mask layer disposed over the array of conductive pads; and a second dielectric layer laterally surrounding the hard mask layer and the array of conductive pads, the second dielectric layer is leveled with the hard mask layer.

原文(中国語)

The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a data storage unit in a first dielectric layer; a word line disposed over the data storage unit; an array of conductive pads disposed over the word line; a hard mask layer disposed over the array of conductive pads; and a second dielectric layer laterally surrounding the hard mask layer and the array of conductive pads, the second dielectric layer is leveled with the hard mask layer.

外部リソース