検索に戻る
案件記録

SEMICONDUCTOR MEMORY SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

発明審査中
2閲覧数
34請求項 · 6 独立
§ Ⅰ

案件概要

IPC分類

H10B 41/27H1L 23/522H10B 41/10H10B 43/10H10B 43/27

CPC分類

H10B41/27H1L23/5226H10B41/10H10B43/10H10B43/27

A semiconductor memory system includes a semiconductor memory device. The semiconductor memory device includes a first stack, a second stack, and a third stack. The second stack is disposed over the first stack. The second stack includes a plurality of word lines stacked and insulated from each other. The third stack is disposed over the second stack. The third stack includes a second selection line. The channel structure includes a first channel pillar formed through the first stack and the second stack, and a second channel pillar contacting the first channel pillar and formed in the third stack. A diameter of the second channel pillar is smaller than a diameter of the first channel pillar.

原文(中国語)

A semiconductor memory system includes a semiconductor memory device. The semiconductor memory device includes a first stack, a second stack, and a third stack. The second stack is disposed over the first stack. The second stack includes a plurality of word lines stacked and insulated from each other. The third stack is disposed over the second stack. The third stack includes a second selection line. The channel structure includes a first channel pillar formed through the first stack and the second stack, and a second channel pillar contacting the first channel pillar and formed in the third stack. A diameter of the second channel pillar is smaller than a diameter of the first channel pillar.

外部リソース