MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

原文（中国語）

A memory device includes conductive patterns and first interlayer insulating layers stacked alternately with each other in a first direction, a dummy pattern separated from the conductive patterns in the first direction, a second interlayer insulating layer located between the conductive patterns and the dummy pattern, protruding patterns protruding in a second direction crossing the first direction from side surfaces of the first interlayer insulating layers and a side surface of the second interlayer insulating layer, and data storage patterns located between the protruding patterns.