SEMICONDUCTOR DEVICES WITH INSULATION FEATURES
案件概要
出願人
Taiwan Semiconductor Manufacturing Company, Ltd.
発明者
Tzu-Ging Lin
IPC分類
CPC分類
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.
原文（中国語）
Semiconductor devices with insulation structures and methods of fabrication are provided. A method includes forming fins over a substrate; forming a gate over the fins, wherein a sidewall spacer is laterally adjacent to the gate; removing an upper portion of the sidewall spacer; forming a cavity by removing a selected segment of the gate and removing a selected fin located under the selected segment; and forming an insulation feature in the cavity.
外部リソース