III-V COMPOUND SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GATE STRUCTURE COMPRISING A FIELD PLATE WITH CURVED SIDEWALLS

原文（中国語）

A semiconductor device includes a substrate, a III-V compound semiconductor layer, a gate structure, a drain structure, a field plate, and an electrically conductive barrier layer. The III-V compound semiconductor layer is disposed on the substrate. The gate structure, the drain structure, and the field plate are disposed above the III-V compound semiconductor layer. The field plate is located between the gate structure and the drain structure and includes a first curved sidewall located at an edge of the field plate adjacent to the drain structure. The gate structure is directly connected with the field plate and the electrically conductive barrier layer. The first curved sidewall is directly connected with a top surface and a bottom surface of the field plate. An included angle between the top surface and the first curved sidewall is less than an included angle between the bottom surface and the first curved sidewall.