TECHNOLOGIES FOR A RIBBON FIELD EFFECT TRANSISTOR WITH TWO-DIMENSIONAL ELECTRON OR HOLE GAS CHANNELS
案件概要
発明者
Rachel A. Steinhardt; Pratyush P. Buragohain; Kevin P. O'Brien; Dominique A. Adams; Karam Cho; Scott B. Clendenning; Punyashloka Debashis; Shane Harlson; Raseong Kim; Matthew V. Metz; John J. Plombon; Marko Radosavljevic; Carly Rogan; Hojoon Ryu; Arnab Sen Gupta; Tristan A. Tronic; I-Cheng Tung; Ian Alexander Young
IPC分類
CPC分類
Technologies for a field effect transistor (FET) with a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) are disclosed. In an illustrative embodiment, channel fins of a ribbon FET include two perovskite layers. At an interface between the perovskite layers, a 2DEG or a 2DHG is formed. The 2DEG or 2DHG can act as a channel for an NMOS or PMOS transistor, respectively. In some embodiments, an NMOS transistor with a 2DEG channel can be combined with a PMOS transistor with a 2DHG channel can be combined in a CMOS system. Additionally, methods of manufacturing such transistors are disclosed.
原文（中国語）
Technologies for a field effect transistor (FET) with a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) are disclosed. In an illustrative embodiment, channel fins of a ribbon FET include two perovskite layers. At an interface between the perovskite layers, a 2DEG or a 2DHG is formed. The 2DEG or 2DHG can act as a channel for an NMOS or PMOS transistor, respectively. In some embodiments, an NMOS transistor with a 2DEG channel can be combined with a PMOS transistor with a 2DHG channel can be combined in a CMOS system. Additionally, methods of manufacturing such transistors are disclosed.
外部リソース