NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFECT TRANSISTOR AND ELECTRICAL EQUIPMENT

原文（中国語）

This normally-off mode polarization super junction GaN-based FET has an undoped GaN layeran AlGaN layeran island-like undoped GaN layera p-type GaN layerand a p-type InGaN layerwhich are stacked in order. The FET has a gate electrodeon the uppermost layer, a source electrodeand a drain electrodeon the AlGaN layerand a p-type InGaN layerand a gate electrodewhich are located beside one end of the undoped GaN layeron the AlGaN layerThe gate electrodemay be provided on the p-type InGaN layervia a gate insulating film. At a non-operating time, n≤n<n<nis satisfied for the concentration nof the 2DEGformed in the undoped GaN layerthe AlGaN layerhetero-interface just below the gate electrodethe concentration nof the 2DEGjust below the gate electrodethe concentration nof the 2DEGin the polarization super junction region and the concentration nof the 2DEGin the part between the polarization super junction region and the drain electrode