THIN FILM TRANSISTORS HAVING MULTI-LAYER CONTACT METALLIZATION

原文（中国語）

Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A channel material layer is on the gate dielectric layer. A dielectric layer is over the channel material layer. Source or drain contacts are on the channel material layer. Each of the source or drain contacts includes a semiconductor material layer, a conductive liner on and within the semiconductor material layer, and a conductive fill on the conductive liner, where one, two or all three of the semiconductor material layer, the conductive liner, or the conductive fill has an uppermost surface at a same level as an uppermost surface of the dielectric layer.